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Toshiba America Electronic Components (TAEC) has announced its TA4401CT, a medium power Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) power amplifier that is well suited for use in 1.9 GHz to 2.5 GHz band wireless applications including the Wireless LAN (WLAN), Personal Handset System (PHS) and Bluetooth (BT). The TA4401CT is designed with three cascaded RF stages optimized for linearity, efficiency and low-power consumption. It is applicable for use in regulated IEEE802.11b/g WLAN systems, and it is also targeted for PHS applications. It delivers IEEE802.11g standard 18 decibels/mW (dBm) of average output power with 27.5 decibels (dB) of gain and 3 percent of Error Vector Magnitude (EVM) performance while consuming 125 mA of current at 3.3V power supply voltage. Samples are priced at $1 each.
http://www.semicon.toshiba.co.jp/eng/prd/hfreq/eye/eye200512_02e.html
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